Samsung announced the mass production of its 9th generation V-NAND flash memory, which offers a 33% increase over the 8th generation V-NAND memory.
Samsung 9th Gen 1TB TCL V-NAND Mass Production Begins, QLC in H2 2024, Delivers 33% Increase in Speeds
The announcement was more or less expected since we announced the start of mass production of 9th generation V-NAND flash a few weeks ago. Firstly, TCL NAND will go into production (this month) and mass production of QLC is expected in the second half of the year. It is also reported that the 9th generation V-NAND will feature more than 290 layers, but this is not officially confirmed by Samsung itself.
Press release: Samsung Electronics, the global leader in advanced memory technologies, today announced that it has begun mass production of its 9th generation vertical triple-level NAND (V-NAND) of one terabit (Tb), strengthening thus its leadership in the field. NAND flash market.
With the industry’s smallest cell size and thinnest die, Samsung has improved the bit density of 9th Generation V-NAND by approximately 50% compared to 8th Generation V-NAND. Innovations such as avoiding cellular interference and extending cell life have been applied to improve product quality and reliability, while the elimination of dummy channel holes has significantly reduced the flat surface area memory cells.
Additionally, Samsung’s advanced “channel hole etching” technology demonstrates the company’s leadership in process capabilities. This technology creates electron paths by stacking die layers and maximizes manufacturing productivity because it enables the industry’s highest number of cell layers to be drilled simultaneously in a dual-stack structure. As the number of cell layers increases, the ability to pierce higher numbers of cells becomes essential, requiring more sophisticated etching techniques.
9th Generation V-NAND features the next-generation NAND flash interface, “Toggle 5.1,” which supports 33% increased data input/output speeds up to 3.2 gigabits per second (Gbps). Along with this new interface, Samsung plans to consolidate its position in the high-performance SSD market by expanding support for PCIe 5.0.
Power consumption has also been improved by 10% thanks to advancements in low-power design, compared to the previous generation. As reducing energy consumption and carbon emissions becomes vital for customers, Samsung’s 9th generation V-NAND is expected to provide an optimal solution for future applications. Samsung began mass production of the 1TB TLC 9th generation V-NAND this month, followed by the quad-level cell (QLC) model in the second half of this year.
Samsung announced the mass production of its 9th generation V-NAND flash memory, which offers a 33% increase over the 8th generation V-NAND memory.
Samsung 9th Gen 1TB TCL V-NAND Mass Production Begins, QLC in H2 2024, Delivers 33% Increase in Speeds
The announcement was more or less expected since we announced the start of mass production of 9th generation V-NAND flash a few weeks ago. Firstly, TCL NAND will go into production (this month) and mass production of QLC is expected in the second half of the year. It is also reported that the 9th generation V-NAND will feature more than 290 layers, but this is not officially confirmed by Samsung itself.
Press release: Samsung Electronics, the global leader in advanced memory technologies, today announced that it has begun mass production of its 9th generation vertical triple-level NAND (V-NAND) of one terabit (Tb), strengthening thus its leadership in the field. NAND flash market.
With the industry’s smallest cell size and thinnest die, Samsung has improved the bit density of 9th Generation V-NAND by approximately 50% compared to 8th Generation V-NAND. Innovations such as avoiding cellular interference and extending cell life have been applied to improve product quality and reliability, while the elimination of dummy channel holes has significantly reduced the flat surface area memory cells.
Additionally, Samsung’s advanced “channel hole etching” technology demonstrates the company’s leadership in process capabilities. This technology creates electron paths by stacking die layers and maximizes manufacturing productivity because it enables the industry’s highest number of cell layers to be drilled simultaneously in a dual-stack structure. As the number of cell layers increases, the ability to pierce higher numbers of cells becomes essential, requiring more sophisticated etching techniques.
9th Generation V-NAND features the next-generation NAND flash interface, “Toggle 5.1,” which supports 33% increased data input/output speeds up to 3.2 gigabits per second (Gbps). Along with this new interface, Samsung plans to consolidate its position in the high-performance SSD market by expanding support for PCIe 5.0.
Power consumption has also been improved by 10% thanks to advancements in low-power design, compared to the previous generation. As reducing energy consumption and carbon emissions becomes vital for customers, Samsung’s 9th generation V-NAND is expected to provide an optimal solution for future applications. Samsung began mass production of the 1TB TLC 9th generation V-NAND this month, followed by the quad-level cell (QLC) model in the second half of this year.