While Samsung has started mass production of its next-generation 5nm chip, the company is also working hard to improve the current 7nm process. The Korean tech giant has announced that it has successfully applied 3D stacking technology to 7-nanometer (nm) chips based on Extreme Ultraviolet (EUV).
Samsung calls the technology eXtended-Cube or X-Cube and that involves stacking the SRAM on top of the logic matrix. This is done using Samsung’s Via Silicon Via (TSV) technology which uses tiny holes to interconnect the layers on the chips.
This process is markedly different from that used on conventional system semiconductors whose logical arrays such as the CPU and GPU are on the same plane as SRAM. In the case of the X-Cube, it stacks the SRAM on top of the logical arrays, which takes up less space and contributes to more efficient power saving. Samsung also revealed that the new process will result in an increase in data transfer speed.
The South Korean tech giant has assured that it will continue to push the boundaries in terms of developing new technologies for the advancement of semiconductor technology. We have no idea where Samsung would first implement this chipset, but there is speculation that the Galaxy S1 could use an upgraded version of the Exynos 990 while the Galaxy S21 Ultra will have an Exynos. 1000 5 nm and that could be it.
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